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| FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11445-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS08314A-80L FEATURES * * * * * * * * TM Pseudo SRAM with Single Data Rate (SDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3 Burst Mode Function Multiplexed Address and Data Bus Asynchronous Mode Capability High-speed Data Transfer Rate _____ _____ * Byte Control by B3 to B0 Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip MAIN SPECIFICATIONS Part Number Organization I/O Bus Configuration Interface Supply Voltage Burst Frequency (Max.) Data Transfer Rate CLK Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep RL=8, 7 MB82DBS08314A-80L 8 M WORD x 32 BIT x 32 Multiplexed Address and Data Bus Single Data Rate (SDR) 1.7 V to 1.95 V 100 MHz 400M byte / s 7 ns 40 mA 250 A 10 A Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright(c)2006-2007 FUJITSU LIMITED All rights reserved |
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